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IRFR2405PBF

Advanced Process Technology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2405PBF

Advanced Process Technology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405PBF

Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2405PBF

HEXFET Power MOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405PBF

Advanced Process Technology

IRF

International Rectifier

IRFR2405PbF

Surface Mount (IRFR2405)

IRF

International Rectifier

IRFR2405PBF_15

Advanced Process Technology

IRF

International Rectifier

IRFR2405TR

55VN-ChannelMOSFET

Description AdvancedProcessTechnology Dynamicdv/dtRating FastSwitching FullyAvalancheRated Lead-Free VDS(V)=55V ID=34A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR2405TRPBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405TRPBF

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR2405PBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
D-PAK
2000
只做原廠渠道 可追溯貨源
 詢(xún)價(jià)
IR
23+
D2PAK
7750
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
IR
24+
原廠封裝
24000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
17+
TO-252
6200
詢(xún)價(jià)
Infineon
18+
NA
3608
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
IR
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
Infineon
23+
NA
874
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
IR
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢(xún)價(jià)
更多IRFR2405PBF供應(yīng)商 更新時(shí)間2025-2-7 16:36:00

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