首頁>IPD60R750E6>規(guī)格書詳情
IPD60R750E6中文資料無錫固電數據手冊PDF規(guī)格書
IPD60R750E6規(guī)格書詳情
? DESCRITION
? High peak current capability
? FEATURES
? Static drain-source on-resistance:
RDS(on)≤0.75?
? Enhancement mode:
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device
performance and reliable operation
產品屬性
- 型號:
IPD60R750E6
- 功能描述:
MOSFET N-CH 650V 5.7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEO |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
NA/ |
5135 |
原裝現貨,當天可交貨,原型號開票 |
詢價 | ||
Infineon(英飛凌) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-252 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
SOT-252 |
17534 |
原裝進口假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
14+ |
TO-252 |
27500 |
詢價 | |||
INFINEON/英飛凌 |
22+ |
TO-252 |
6000 |
進口原裝 假一罰十 現貨 |
詢價 | ||
INFINEON/英飛凌 |
14+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 |