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IIPD60R750E6

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP60R750E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R750E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R750E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD60R750E6

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R750E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R750E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPD60R750E6ZT

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    COOL MOS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON
23+
7000
詢價(jià)
INFINEON
22+23+
TO252
75327
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
英飛凌
報(bào)價(jià)為準(zhǔn)
INF
100
國(guó)外訂貨7-10個(gè)工作日
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
英飛凌
21+
PG-TO252-3
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
INFINE0N
21+
PG-TO252-3
32568
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
INFINEON/英飛凌
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
Infineon(英飛凌)
2447
PG-TO252-3
115000
2500個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
更多IPD60R750E6ZT供應(yīng)商 更新時(shí)間2025-2-14 15:00:00

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