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IIPD60R450E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.45? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R450E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R450E6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R450E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R450E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R450E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R450E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R450E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.45? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R450E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R450E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPP60R450E6ZK

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    COOL MOS

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
INFINE0N
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INF
25+23+
TO-220
26863
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO-220
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
INF
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
Infineon Technologies
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IPP60R450E6ZK供應(yīng)商 更新時間2025-5-17 15:00:00

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