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IRF253

N-CHANNEL POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF253

N-CHANNE POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF253

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF2804

HEXFET Power MOSFET

VDSS=40V RDS(on)=2.0m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRF2804L

HEXFET Power MOSFET

VDSS=40V RDS(on)=2.0m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRF2804LPBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF2804PBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF2804S

HEXFET Power MOSFET

VDSS=40V RDS(on)=2.0m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRF2804S-7P

AUTOMOTIVE MOSFET

VDSS=40V RDS(on)=1.6m? ID=160A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprove

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱(chēng)：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
263
8000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
IR
23+
263
8000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
IR
23+
263
7000
詢(xún)價(jià)
IR
20+
MODULE
320
進(jìn)口原裝支持實(shí)單
 詢(xún)價(jià)
IR
24+
MICRO8
950
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
INFINEON英飛凌
2000
詢(xún)價(jià)
IR
13+
TO263
783
旗艦店
 詢(xún)價(jià)
NS
23+
T0220
5628
原廠原裝
 詢(xún)價(jià)
21+
N/A
7102
全新原裝虧本出
 詢(xún)價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-23 10:00:00

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