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IRF254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF254

Nanosecond Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF254

Avalanche-Energy-Rated N-Channel Power MOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFM254

PulsewidthlimitedbyMaximumJunctionTemperature

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFP254

PowerMOSFET(Vdss=250V,Rds(on)=0.14ohm,Id=23A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP254

StandardPowerMOSFET-N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP254

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP254

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP254

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP254

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+
TO-3
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-3
52746
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-3
7000
詢價
FAIR
23+
TO-3P
65480
詢價
FAIR
2023+環(huán)保現(xiàn)貨
標準封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
更多IRF254供應商 更新時間2025-4-3 10:50:00

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