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IRF1010Z

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010ZL

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF1010ZS

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF1018EPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESLPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1104

Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104L

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104LPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF1104PBF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
IR
24+
MICRO8
950
原裝現(xiàn)貨假一罰十
 詢價(jià)
Fairchi
24+
DXPAK
6000
進(jìn)口原裝正品假一賠十,貨期7-10天
 詢價(jià)
SAMSUNG
24+
TO-220
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價(jià)
IR
19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
IRF
24+
SOP-8P
400
現(xiàn)貨
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-21 10:01:00

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