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IRFB260

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB260NPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFB260NPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFI260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRF

International Rectifier

IRFI260

SimpleDriveRequirements

IRF

International Rectifier

IRFM260

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.060ohm,Id=35A*)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs

IRF

International Rectifier

IRFM260

SimpleDriveRequirements

IRF

International Rectifier

IRFP260

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
05+
原廠原裝
6301
只做全新原裝真實現(xiàn)貨供應
 詢價
2020+
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
23+
TO247
3
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價
IR
22+
TO247
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO247
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO247
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO247
7000
詢價
IR
23+
TO247
8653
全新原裝優(yōu)勢
 詢價
IR
2447
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
IR
23+
DIP
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多IRF260N供應商 更新時間2025-3-15 10:32:00

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