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IRF3710PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF3710PBF
廠商型號(hào)

IRF3710PBF

功能描述

HEXFET Power MOSFET

文件大小

185.06 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-20 13:10:00

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IRF3710PBF規(guī)格書詳情

VDSS = 100V

RDS(on) = 23m?

ID = 57A

Description

Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF3710PBF

  • 功能描述:

    MOSFET MOSFT 100V 57A 23mOhm 86.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
INFINEON/英飛凌
2407+
TO-220-3
30098
全新原裝!倉庫現(xiàn)貨,大膽開價(jià)!
詢價(jià)
IR
1709
TO-220
4500
原裝正品現(xiàn)貨
詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
IR
22+
TO220
9000
原裝正品
詢價(jià)
IR
2023
TO-220
5500
公司原裝現(xiàn)貨/支持實(shí)單
詢價(jià)
INFINEON
23+
TO-220
23233
正規(guī)渠道,只有原裝!
詢價(jià)
INFINEON/英飛凌
21+
TO-220
2500
原裝現(xiàn)貨
詢價(jià)
IR
23+
T0-220
1600
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購!
詢價(jià)
INFINEON/英飛凌
24+
N/A
49000
詢價(jià)
Infineon(英飛凌)
2024+
TO-220-3
500000
誠信服務(wù),絕對(duì)原裝原盤
詢價(jià)