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IRFP3710

PowerMOSFET(Vdss=100V,Rds(on)=0.025W,Id=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤25m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP3710PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.025廓,ID=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR(國(guó)際整流器)
24+
N/A
7548
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
12+
TO263
2500
原裝現(xiàn)貨/特價(jià)
 詢價(jià)
INFINEONINEON
20+
原裝
65790
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
Infineon(英飛凌)
2447
D2PAK
115000
800個(gè)/卷一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
更多IRF3710STR供應(yīng)商 更新時(shí)間2025-5-5 10:22:00

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