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IRF530S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530S

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF530S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530S

HEXFET Power MOSFET

IRF

International Rectifier

IRF530S

Halogen-free According to IEC 61249-2-21

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530S

Marking：D2PAK；Package：TO-263；N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF530S

  • 功能描述：

    MOSFET N-Chan 100V 14 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
22+
D2-PAK
9450
原裝正品，實(shí)單請聯(lián)系
 詢價(jià)
IR
06+
TO-263
10000
自己公司全新庫存絕對有貨
 詢價(jià)
IR
24+/25+
177
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價(jià)
IR
24+
NA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
I
24+
T0-263
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
更多IRF530S供應(yīng)商 更新時(shí)間2025-4-2 9:04:00

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