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IRF540D

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540F

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540FI

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF540FI

iscN-ChannelMosfetTransistor

DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540I

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve

Intersil

Intersil Corporation

IRF540N

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF540N

N-ChannelMosfetTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.044? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540N

AdvancedProcessTechnology

VDSS=100V RDS(on)=44m? ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540N

SEMICONDUCTORS

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供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VBSEMI/微碧半導(dǎo)體
24+
TO220
48000
臺(tái)積電晶圓長(zhǎng)電封裝微碧原裝可長(zhǎng)久大量供應(yīng)
 詢價(jià)
IR
2016+
TO220
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHIL
23+
TO-220
3000
原裝正品假一罰百!可開增票!
 詢價(jià)
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
IR
22+
TO220
50000
只做正品原裝,假一罰十,歡迎咨詢
 詢價(jià)
IR
21+
TO220
9866
詢價(jià)
INFINEON/英飛凌
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多IRF540APBF-VB供應(yīng)商 更新時(shí)間2025-3-21 16:35:00

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