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IRF640NSTRLPBF

Advanced Process Technology

IRF

International Rectifier

IRF640PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640PBF

18A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF640PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640PBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF640PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640S

N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF640S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRF640NSTRL

  • 功能描述：

    MOSFET MOSFT 200V 18A 150mOhm 44.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
22+
D2PAK
6000
公司現(xiàn)貨，只做原裝，可提供BOM配單服務(wù)！
 詢價
IR
0642/0742
TO-263
9600
原裝正品庫存優(yōu)勢
 詢價
IR
23+
TO-263
14769
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-263
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
24+
TO-263
15000
原裝正品現(xiàn)貨
 詢價
IR
2020+
TO-263
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
INFINEON
21+
TO-263
1600
原裝 真實庫存 實單請給TP
 詢價
INFINEON/IR
1907+
NA
6400
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INF
22+
30000
原裝現(xiàn)貨,假一罰十,可含稅原進項
 詢價
INFINEON
22+
D2PAK
24800
原裝正品可支持驗貨,歡迎咨詢
 詢價
更多IRF640NSTRL供應(yīng)商 更新時間2025-2-7 17:32:00

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