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IRFS610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?3.3A,200V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical7.2nC) ?LowCrss(typical6.8pF) ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLS610A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLW610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
SMD
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
SMD
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
SMD
7000
詢價(jià)
INTERSIL
05+
原廠原裝
4236
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
FAIRCHI
17+
TO-220
60000
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
INTERSIL
24+
35200
一級(jí)代理/放心采購
詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
23+
D2-Pak
11026
全新原裝
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多IRF610R供應(yīng)商 更新時(shí)間2025-4-8 14:00:00