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IRF630B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630B

N-Channel MOSFET Transistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630F

N-channel mosfet transistor

?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FI

isc N-Channel MOSFET Transistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FP

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-Channel 200 V (D-S) MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630

  • 功能描述：

    MOSFET N-Ch 200 Volt 10 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HARRIS
19+
TO-220
20000
詢價(jià)
STM
22+
TO-220-3
40000
詢價(jià)
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
APEC
全新原裝
TO-220(P)
5000
全新原裝 貨期兩周
 詢價(jià)
2015+
500
公司現(xiàn)貨庫(kù)存
 詢價(jià)
IR
24+
TO-220
2000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
 詢價(jià)
ST/意法
1809+
TO-220
3
原裝正品 可含稅交易
 詢價(jià)
STM
21+
15000
TO-220-3
 詢價(jià)
ST(意法半導(dǎo)體)
24+
?TO-220
10000
只做原裝現(xiàn)貨 假一賠萬(wàn)
 詢價(jià)
MOT
24+
3TO-220
4000
原裝原廠代理 可免費(fèi)送樣品
 詢價(jià)
更多IRF630供應(yīng)商 更新時(shí)間2025-4-11 16:04:00

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