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IRF630

N-channel mosfet transistor

Features ?WithTO-220package ?Lowon-stateandthermalresistance ?Fastswitching ?VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParall

IRF

International Rectifier

IRF630

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedswitching, uninterruptiblepowersupply,motorcontrol,audioamplifiers, industrialactuators. DC-DC&DC-ACconvertersfortelecom,industrialand consumerenvironment. Complianc

COMSET

Comset Semiconductor

IRF630

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF630

N-Channel Power MOSFET

DESCRIPTION TheNellIRF630areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. Theyaredesignedasanextremelyefficientandreliabledeviceforuseinawi

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF630

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF630

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF630

N-channel TrenchMOS transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF630

FIELD EFFECT POWER TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號：

    IRF630

  • 功能描述：

    MOSFET N-Ch 200 Volt 10 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
HARRIS
19+
TO-220
20000
詢價
STM
22+
TO-220-3
40000
詢價
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
APEC
全新原裝
TO-220(P)
5000
全新原裝 貨期兩周
 詢價
2015+
500
公司現(xiàn)貨庫存
 詢價
IR
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
ST/意法
1809+
TO-220
3
原裝正品 可含稅交易
 詢價
STM
21+
15000
TO-220-3
 詢價
ST(意法半導體)
24+
?TO-220
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
MOT
24+
3TO-220
4000
原裝原廠代理 可免費送樣品
 詢價
更多IRF630供應商 更新時間2025-4-11 16:04:00

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