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IRF640STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF640STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF640STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF640STRR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF640STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF640STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF640T

N-channel200V-0.15廓-15A-TO-220MESHOVERLAY??PowerMOSFET

Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRFF640

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

IRFI640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    IRF640STRL

  • 功能描述：

    MOSFET N-Chan 200V 18 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
14
只做原廠渠道 可追溯貨源
 詢價
IR
06+
TO-263
14
深圳原裝進口現(xiàn)貨
 詢價
IR
24+
TO-263
36800
詢價
INTERNATIONA
05+
原廠原裝
11112
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
23+
TO-263
9500
專業(yè)優(yōu)勢供應
 詢價
IR
17+
TO-263
6200
詢價
IR
22+23+
TO-263
14625
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
TO-263
6896
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
更多IRF640STRL供應商 更新時間2025-2-20 16:36:00

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