首頁 >IRFC9110B>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRFD9110

1-WATTRATEDPOWERMOSFETs

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs

Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features ?-0.6Aand-07A,-80Vand-100V ?rDS(ON)=

HARRIS

Harris Corporation

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A)

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導體

IRFD9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFD9110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導體

IRFD9110PBF

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-0.70A)

IRF

International Rectifier

IRFD9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFC9110B

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    MOSFET P-CHANNEL 100V - Bulk

供應商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
7000
詢價
IR
23+
SMD
9888
專做原裝正品,假一罰百!
 詢價
IR
1244+
裸片
1066
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
23+
65480
詢價
更多IRFC9110B供應商 更新時間2025-4-27 10:00:00

相關規(guī)格書

更多

相關庫存

更多