IRFD110中文資料威世科技數據手冊PDF規(guī)格書
IRFD110規(guī)格書詳情
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? For automatic insertion
? End stackable
? 175 °C Operating Temperature
? Fast switching and ease of paralleling
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
產品屬性
- 型號：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
22+ |
5000 |
詢價 | |||||
IR |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
VISHAY |
2022+ |
DIP4 |
20000 |
只做原裝進口現貨.假一罰十 |
詢價 | ||
IR |
23+ |
HD-1 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
VISHAY/威世 |
21+ |
HVMDIP-4 |
2534 |
只做原裝,一定有貨,不止網上數量,量多可訂貨! |
詢價 | ||
IR |
2018+ |
HD-1 |
26976 |
代理原裝現貨/特價熱賣! |
詢價 | ||
IR |
00+ |
NA |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
VISHAY/威世 |
21+ |
HVMDIP-4 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
VISHAY |
1816+ |
. |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
IR |
22+ |
DIP-4 |
5000 |
絕對全新原裝現貨 |
詢價 |
