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IRFI610B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS610A

AdvencedPowerMOSFET(N-CHANNEL)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS610A

iscSiliconNPNPowerTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?3.3A,200V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical7.2nC) ?LowCrss(typical6.8pF) ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFI610B

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    200V N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHILD/仙童
23+
TO262
28888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR/ST/仙童
23+
TO-220F
3000
全新原裝
 詢價(jià)
VISHAY
1503+
TO220-3
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Vishay Siliconix
21+
TO2203 Isolated Tab
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
VISHAY/威世
23+
TO220FP
6000
原裝正品，支持實(shí)單
 詢價(jià)
Vishay Siliconix
2022+
TO-220-3 全封裝,隔離接片
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
更多IRFI610B供應(yīng)商 更新時(shí)間2025-3-14 18:33:00

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