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IRFP254

Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP254

Standard Power MOSFET - N-Channel Enhancement Mode

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP254

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP254

HEXFET? Power MOSFET

TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmoutinghole.Italsoprovidesgreatercreepagedistancebetweenpinstomee

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP254

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFP254

  • 功能描述：

    MOSFET N-Chan 250V 23 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO 3P
161064
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
24+
TO-247
2560
詢價(jià)
IR
24+/25+
45
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
IR
23+
TO-247
35890
詢價(jià)
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
SMG
05+
原廠原裝
57
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
23+
TO-3P
9980
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
IR
2020+
TO-3P
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
更多IRFP254供應(yīng)商 更新時(shí)間2025-4-15 19:10:00

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