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IRFP2907PBF

AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiv

IRF

International Rectifier

IRFP2907PBF

Advanced Process Technology

IRF

International Rectifier

IRFP2907PBF_15

Advanced Process Technology

IRF

International Rectifier

IRFP2907Z

AUTOMOTIVEMOSFET

VDSS=75V RDS(on)=4.5m? ID=90A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunction

IRF

International Rectifier

IRFP2907Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP2907ZPBF

HEXFETPowerMOSFET

VDSS=75V RDS(on)=4.5m? ID=90A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFP2907ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

JS2907

Rad-hard60V,0.6APNPtransistor

Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

JSR2907

Rad-hard60V,0.6APNPtransistor

Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

KMBT2907

PNPGeneralPurposeAmplifier

■Features ●CollectorCurrenttoContinuous:IC=-600mA ●PowerDissipation:PD=250mW

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFP2907PBF

  • 功能描述：

    MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-247
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-247
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-247
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
INFINEON/IR
1907+
NA
3650
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
 詢價
Infineon Technologies
24+
TO-247AC
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IR
24+
TO-247
15000
全新原裝的現(xiàn)貨
 詢價
IR
16+
TO-247
6141
全新原裝/深圳現(xiàn)貨庫2
 詢價
IR
23+
TO-247
65400
詢價
INFINEON/英飛凌
24+
TO-247
18498
原裝進(jìn)口假一罰十
 詢價
更多IRFP2907PBF供應(yīng)商 更新時間2025-5-16 17:13:00

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