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IRFR210

Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)

DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh

IRF

International Rectifier

IRFR210

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR210_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR210B

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR210BTF

N-channel Enhancement Mode Power MOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFR210BTM

N-channel Enhancement Mode Power MOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR210

  • 功能描述：

    MOSFET N-Chan 200V 2.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO 252
161396
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
VISHAY/威世
24+
TO-252
501758
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
23+
TO-252
35890
詢價(jià)
IR
2000
105
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
05+
TO-252
15000
原裝進(jìn)口
 詢價(jià)
IR
24+
TO-252
57200
新進(jìn)庫存/原裝
 詢價(jià)
VISHAY
23+
D2Pak
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
24+
原廠封裝
2845
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
24+
TO-252
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
IR
2020+
TO-252
15150
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
更多IRFR210供應(yīng)商 更新時(shí)間2025-2-12 19:10:00

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