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IRFR220BTM

N-channel Enhancement Mode Power MOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFR220N

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent TypicalSMPSTopologies ●T

IRF

International Rectifier

IRFR220N

SMPS MOSFET

Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220N

Marking：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65

Application Load/PowerSWwitching InterfacingSwitching BatteryManagementforUltraSmallPortable Electronics LogicLevelShift

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IRFR220NPBF

HEXFET Power MOSFET

Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGatetoDrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFR220NTRPBF-TP

Marking：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features ?Vos=200v +o=60A +Rosin50650@Ves=10V.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IRFR220PBF

HEXFEP Power MOSFET

HEXFEP?PowerMOSFETVdss=200VRDS(on)=0.80?ID=4.8A

IRF

International Rectifier

IRFR220PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR220PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220R

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFR220

  • 功能描述：

    MOSFET N-Chan 200V 4.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO252
9800
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!
 詢價(jià)
IR
24+
TO-252
4273
只做原廠渠道 可追溯貨源
 詢價(jià)
NXP/恩智浦
24+
TO-252
504346
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
05+
TO-252
15000
原裝進(jìn)口
 詢價(jià)
IR
2015+
TO252
19898
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
24+/25+
75
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
FAIRCHILD
24+
TO-252
71560
詢價(jià)
IR
23+
TO-252
35890
詢價(jià)
IR
2016+
TO-252
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
更多IRFR220供應(yīng)商 更新時(shí)間2025-4-26 15:30:00

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