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IRFR4105ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR4105ZPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR4105ZPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2022+ |
75 |
6600 |
只做原裝,假一罰十,長期供貨。 |
詢價 | ||
IR |
23+ |
TO-252 |
7000 |
詢價 | |||
IR |
20+ |
TO-252 |
4807 |
進口原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IR |
22+ |
TO-252 |
30000 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
IR |
21+ |
TO-252 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
22+ |
TO-252 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
18+ |
TO-252 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
2020+ |
TO-252 |
665 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-252 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 |
