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IRFU4105ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFU4105ZPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFU4105ZPBF
- 功能描述：
MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
TO252 |
7350 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-252-2(DPAK) |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
24+ |
TO-251 |
1198 |
詢價 | |||
INFINEON/英飛凌 |
2407+ |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | |||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon/英飛凌 |
2022+ |
TO-252-2(DPAK) |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon(英飛凌) |
2447 |
TO-252-2(DPAK) |
105000 |
75個/袋一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 |
