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IRFW620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8? ID=5A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.609?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL620PBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620PBF

HEXFETPOWERMOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
MOTO
24+
TO-251
27500
原裝正品,價格最低!
 詢價
IR
06+
TO-251
12000
原裝庫存
 詢價
IR
23+
TO-251
35890
詢價
IR
2016+
TO-251
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-251
9500
專業(yè)優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
13
TO-251
6000
絕對原裝自己現(xiàn)貨
 詢價
IR
24+
I-pak
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
VISHAY/威世
23+
TO-220AB
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多IRFU620供應(yīng)商 更新時間2025-4-3 14:08:00

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