IRFZ34S中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ34S規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34L) is available for low profile applications.
● Advanced Process Technology
● Surface Mount (IRFZ34S)
● Low-profile through-hole (IRFZ34L)
● 175°C Operating Temperature
● Fast Switching
產(chǎn)品屬性
- 型號：
IRFZ34S
- 功能描述：
MOSFET N-Chan 60V 30 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
1822+ |
SOT263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
NA |
19+ |
75111 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | |||
IR |
24+ |
SOT263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
IR |
24+ |
SOT263 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
IR |
22+ |
TO-263 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
IR |
2023+ |
TO-263 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
Vishay |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IR |
23+ |
TO263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO263 |
7000 |
詢價 | |||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 |
