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IRFZ34S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34S

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ34S

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount ?Low-profilethrough-hole(IRFZ34L,SiHFZ34L) ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleasesee www.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34S_V01

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount ?Low-profilethrough-hole(IRFZ34L,SiHFZ34L) ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleasesee www.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34STRR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFZ34S

  • 功能描述：

    MOSFET N-Chan 60V 30 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
5200
只做原廠渠道 可追溯貨源
 詢價
IR
23+
TO-263
35890
詢價
INTERNATIONA
05+
原廠原裝
4254
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IRF
23+
SOT263
9000
專業(yè)優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
NA
19+
75111
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IR
08+
5200
普通
 詢價
VISHAY/威世
2447
TO-263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IRFZ34S供應(yīng)商 更新時間2025-3-15 13:40:00

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