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IRFZ48R

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ48R

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48R

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RL

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFZ48RL

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RLPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFZ48RLPBF

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ48RPBF

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RS

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFZ48R

  • 功能描述：

    MOSFET N-Chan 60V 50 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-220AB
8866
詢價(jià)
IR
05+
原廠原裝
15645
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
IR
24+
TO-220AB
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
NEXPERIA/安世
23+
SOT223
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY
1503+
TO-220
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
IR
21+
TO220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRFZ48R供應(yīng)商 更新時(shí)間2025-3-15 16:30:00

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