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IRG4BC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UDPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30UPBF

UltraFastSpeedIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene

IRF

International Rectifier

IRG4BC30US

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRG4BC30S-STRLP

  • 功能描述：

    IGBT 模塊 600V DC-1 KHZ(STD) DISCRETE IGBT

  • RoHS：

    否

  • 制造商：

    Infineon Technologies

  • 產(chǎn)品：

    IGBT Silicon Modules

  • 配置：

    Dual 集電極—發(fā)射極最大電壓

  • VCEO：

    600 V

  • 集電極—射極飽和電壓：

    1.95 V 在25

  • C的連續(xù)集電極電流：

    230 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    445 W

  • 最大工作溫度：

    + 125 C

  • 封裝/箱體：

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
21+
D2PAK
60000
絕對原裝正品現(xiàn)貨,假一罰十
 詢價
IR
24+
TO263
5000
只做原裝公司現(xiàn)貨
 詢價
IR原裝正品現(xiàn)貨
1816+
.
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
Infineon Technologies
21+
D2PAK
3200
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IR
21+
TO263
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRG4BC30S-STRLP供應(yīng)商 更新時間2025-5-21 14:18:00

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