IRL1104中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRL1104規(guī)格書詳情
VDSS = 40V
RDS(on) = 0.008?
ID = 104A?
Description
Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
產(chǎn)品屬性
- 型號(hào):
IRL1104
- 功能描述:
MOSFET N-CH 40V 104A TO-220AB
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR/VISHAY |
22+ |
TO-262 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR/VISHAY |
24+ |
TO-220 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR/VISHAY |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ir |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
IR |
23+ |
TO-220AB |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
2018+ |
TO220 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心 |
詢價(jià) | ||
VBsemi |
21+ |
TO220 |
10026 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ir |
06+ |
TO-220 |
15000 |
原裝庫(kù)存 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) |