IRL630PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRL630PBF規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Dynamic dv/dt Rating
● Repetitive Avalanche Rated
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● 150°C Operating Temperature
● Fast Switching
● Ease of paralleling
● Lead-Free
產(chǎn)品屬性
- 型號：
IRL630PBF
- 功能描述：
MOSFET N-Chan 200V 9.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VB |
TO-220AB |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
Vishay Siliconix |
24+ |
TO-220AB |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
VISHAY |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR/VISH |
24+ |
65230 |
詢價 | ||||
Vishay |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
VISHAY/威世 |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢價 | ||
SIX |
1535+ |
332 |
詢價 | ||||
VISHAY |
24+ |
TO-220 |
5000 |
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理 |
詢價 |
