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IRLU024NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLU024NPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Logic-Level Gate Drive
● Surface Mount (IRLR024N)
● Straight Lead (IRLU024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產品屬性
- 型號：
IRLU024NPBF
- 功能描述：
MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-251 |
20000 |
詢價 | |||
IR |
24+ |
TO-251-3 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
VISHAY |
24+ |
TO-251 |
12000 |
VISHAY專營進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
21+ |
TO-251 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
24+ |
TO-251 |
65300 |
一級代理/放心購買! |
詢價 | ||
IR |
24+ |
TO-251 |
20540 |
保證進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
07+ |
原廠原裝 |
348900 |
自己公司全新庫存絕對有貨 |
詢價 | ||
INFINOEN |
24+ |
TO-251-3 |
90000 |
一級代理進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
INFINEON |
25+ |
TO-251 |
30000 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
NA |
19+ |
75307 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 |
