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IXFC20N80P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC20N80P

PolarHV HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFH20N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowe

IXYS

IXYS Corporation

IXFH20N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N80Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?E

IXYS

IXYS Corporation

IXFK20N80Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?E

IXYS

IXYS Corporation

IXFK20N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR20N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR20N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFC20N80P

  • 功能描述：

    MOSFET 10 Amps 800V 0.5 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS/艾賽斯
23+
ISOPLUS220
10000
公司只做原裝正品
 詢價
IXYS
22+
ISOPLUS220?
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
23+
ISOPLUS220
6000
原裝正品，支持實(shí)單
 詢價
IXYS
2022+
ISOPLUS220?
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
原裝正品
23+
TO-220
57395
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IXYS/艾賽斯
22+
ISOPLUS220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
 詢價
IXYS
24+
ISOPLUS22
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
更多IXFC20N80P供應(yīng)商 更新時間2025-2-13 14:40:00

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