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IXFH20N80Q

HiPerFETTM Power MOSFETs Q-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?E

IXYS

IXYS Corporation

IXFH20N80Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC20N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC20N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFH20N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH20N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowe

IXYS

IXYS Corporation

IXFK20N80Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?E

IXYS

IXYS Corporation

IXFK20N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR20N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR20N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFH20N80Q

  • 功能描述：

    MOSFET 800V 20A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
23+
TO-247
40000
原裝正品 華強現(xiàn)貨
 詢價
IXYS
24+
TO-247AD
114
詢價
TOS
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
IXYS
23+
TO247
1050
特價庫存
 詢價
IXYS
24+
TO-3P
5000
只做原裝公司現(xiàn)貨
 詢價
TOS
2020+
TO-220
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
19+
TO-3P
32000
原裝正品,現(xiàn)貨特價
 詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
2020+
TO-247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多IXFH20N80Q供應(yīng)商 更新時間2025-2-13 8:30:00

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