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IXFK80N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK80N50P

PolarHV HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFK80N50Q3

HiperFET Power MOSFETs Q3-Class

IXYS

IXYS Corporation

IXFE80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?F

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Fastintrinsicdiode ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?ULrecognized. ?Isolatedmountingbase Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR80N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

IXYS

IXYS Corporation

IXFX80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX80N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK80N50

  • 功能描述：

    MOSFET 500V 80A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
24+
8866
詢價
IXYS
16+
SMD
2875
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 詢價
IXYS
23+
TO-264
5000
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 詢價
IXYS
23+
TO264
1200
特價庫存
 詢價
IXYS
24+
NA
3000
進口原裝正品優(yōu)勢供應
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IXYS
24+
SMD
5500
長期供應原裝現(xiàn)貨實單可談
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IXYS
24+
TO-3PL
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
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IXYS
24+
TO-3PL
197
詢價
IXYS
1931+
N/A
18
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IXYS
1809+
TO-264
326
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更多IXFK80N50供應商 更新時間2025-4-12 10:00:00

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