LH28F800BGEBL85中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application.

FEATURES

? SmartVoltage technology

– 2.7 V, 3.3 V or 5 V VCC

– 2.7 V, 3.3 V, 5 V or 12 V VPP

? High performance read access time LH28F800BG-L85/BGH-L85

– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/ 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V) LH28F800BG-L12/BGH-L12

– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/ 150 ns (2.7 to 3.6 V)

? Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

? Enhanced data protection features

– Absolute protection with VPP = GND

– Block erase/word write lockout during power transitions

– Boot blocks protection with WP# = VIL

? SRAM-compatible write interface

? Optimized array blocking architecture

– Two 4 k-word boot blocks

– Six 4 k-word parameter blocks

– Fifteen 32 k-word main blocks

– Top or bottom boot location

? Enhanced cycling capability

– 100 000 block erase cycles

? Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC in static mode

? Automated word write and block erase

– Command user interface

– Status register

? ETOXTM? V nonvolatile flash technology

? Packages

– 48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend

– 48-ball CSP (FBGA048-P-0808)