1SMB14AT3

Marking：LK；Package：SMB；600 Watt Peak Power Zener Transient Voltage Suppressors

TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients. Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime. TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-e

6.0SMAJ14A

Marking：LK；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

ESD14V12D-C

Marking：LK；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000WattsPeakPulsePowerperLine(tp=8/20μs) 200WattsPeakPulsePowerperLine(tp=10/1000μs) ProtectsoneI/Olineorpowerline Lowclampingvoltage Workingvoltages:5Vto190V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)80A(5/

P6SMB15A

Marking：LK；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

P6SMBJ14A

Marking：LK；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

P6SMBJ15A

Marking：LK；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

PMBTA45

Marking：LK；Package：SOT23；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.1Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBHV9050T. 1.2Featuresandbenefits Highvoltage Lowcollector-emittersaturationvoltageVCEsat H

PMEG200G20ELR

Marking：LK；Package：CFP3；200 V, 2 A Silicon Germanium (SiGe) rectifier

Features ?LowforwardvoltageandlowQrr ?Extremelylowleakagecurrent ?Thermalstabilityupto175°Cjunctiontemperature ?Fastandsmoothswitching ?Lowparasiticcapacitance ?AEC-Q101qualified Benefits ?Excellentefficiency ?Extraordinarysafeoperatingarea ?Minimalim

PMEG200G20ELR-Q

Marking：LK；Package：CFP3；200 V, 2 A Silicon Germanium (SiGe) rectifier

1.Generaldescription SiliconGermanium(SiGe)rectifierencapsulatedinaCFP3(SOD123W)smallandflatlead Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits FeaturesBenefits ?LowforwardvoltageandlowQrr ?Extremelylowleakagecurrent ?Thermalstabilityupto

SMBJ13A

Marking：LK；Package：DO-214AA；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0