M36WT8B10ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

SUMMARY DESCRIPTION

The M36WT864 is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

The memory is offered in a Stacked LFBGA96 (8 x 14mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = 1.65V to 2.2V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 70, 85, 100ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36WT864TF: 8810h

– Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY

■ PROGRAMMING TIME

– 8μs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

SRAM

■ 8 Mbit (512K x 16 bit)

■ EQUAL CYCLE and ACCESS TIMES: 70ns

■ LOW STANDBY CURRENT

■ LOW VDDS DATA RETENTION: 1.5V

■ TRI-STATE COMMON I/O

■ AUTOMATIC POWER DOWN