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M5M5256DP-70LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DP-70LL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DP-70LL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DP-70XL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DP-70XL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DP-70XL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

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160
本站庫存
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MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費送樣
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MIT
23+
DIP28
50000
全新原裝正品現(xiàn)貨,支持訂貨
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MITSUBISHI
24+
DIP-28
4650
詢價
MITSUBISHI/三菱
23+
DIP
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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MITSUBISHI/三菱
2022
TSSOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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MITSUBISHI/三菱
23+
NA/
3462
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
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MIT
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
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MIT
05+
原廠原裝
4326
只做全新原裝真實現(xiàn)貨供應(yīng)
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MIT
2025+
TSSOP
3750
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
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更多M5M5256DP-70供應(yīng)商 更新時間2025-3-16 16:00:00