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MJD31C

Marking:MJD31C;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CA

Marking:MJD31CA;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CH-Q

Marking:MJD31CAH;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?HighcurrentgainatVCE=60V ?ElectricallysimilartopopularMJD31series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CTF

Marking:MJD31C;Package:SOT-428;NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features ?GeneralPurposeAmplifier ?LowSpeedSwitchingApplications ?LoadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD31CUQ-13

Marking:MJD31CU;Package:TO-252;100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?Complem

DIODES

Diodes Incorporated

MJD32C

Marking:MJD32C;Package:DPAK;100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD32CA

Marking:MJD32CA;Package:DPAK;100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD32CUQ-13

Marking:MJD32CU;Package:TO-252;100V PNP HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>-100V ?IC=-3AHighContinuousCollectorCurrent ?ICM=-5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?Comp

DIODES

Diodes Incorporated

MJD41C

Marking:MJD41C;Package:DPAK;100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD41series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds Applications ?Powermanagement ?Loadswitch ?Linear

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD41C

Marking:MJD41CXXXX;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimil

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

晶體管資料

  • 型號:

    MJ1000

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,

  • 最大耗散功率:

    90W

  • 放大倍數(shù):

    β>1000

  • 圖片代號:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    8

  • wtest:

    90

詳細(xì)參數(shù)

  • 型號:

    MJ

  • 制造商:

    ON Semiconductor

  • 功能描述:

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SANYO/三洋
22+
SOT-23
25000
只有原裝原裝,支持BOM配單
詢價(jià)
23+
SOP
16567
正品:QQ;2987726803
詢價(jià)
TI
2021
BGA
1000
全新、原裝
詢價(jià)
TOSHIBA/東芝
22+
SOT-89
20000
保證原裝正品,假一陪十
詢價(jià)
TOSHIBA/東芝
22+
SOT-89
100000
代理渠道/只做原裝/可含稅
詢價(jià)
XX
23+
SOT-234
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
XX
24+
NA/
12250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價(jià)
聯(lián)發(fā)科技MTK)
23+
集成電路IC-PROC,,
6000
原裝,現(xiàn)貨
詢價(jià)
NVIDIA
2023+
BGA
1
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價(jià)
FAIRCHILD/仙童
23+
SOT-23
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
更多MJ供應(yīng)商 更新時(shí)間2025-4-8 9:30:00