零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

MJD41C-Q

Marking:MJD41CA;Package:DPAK;100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD41series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforusei

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD42C

Marking:MJD42C;Package:DPAK;100 V, 6 A PNP high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD42series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds Applications ?Powermanagement ?Loadswitch ?Linear

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD42C

Marking:MJD42CXXXX;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimila

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MJD42C-Q

Marking:MJD42CA;Package:DPAK;100 V, 6 A PNP high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD42series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforusei

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD44H11

Marking:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD44H11A

Marking:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11A 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?El

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD45H11

Marking:MJD45H11;Package:DPAK;80 V, 8 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD45H11A

Marking:MJD45H11A;Package:DPAK;80 V, 8 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11A 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?El

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD50TF-O-R-B-A

Marking:MJD50;Package:DPAK;HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ●Highbreakdownvoltage ●Highcurrentcapability ●Highswitchingspeed ●Highreliability ●RoHSproduct APPLICATIONS ●Highfrequencyswitchingpowersupply ●Highfrequencypowertransform ●Commonlypoweramplifiercircuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MJE170

Marking:MJE170;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES LowPowerAudioAmplifier LowCurrent,HighSpeedSwitchingApplications

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

晶體管資料

  • 型號:

    MJ1000

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質:

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,

  • 最大耗散功率:

    90W

  • 放大倍數(shù):

    β>1000

  • 圖片代號:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    8

  • wtest:

    90

詳細參數(shù)

  • 型號:

    MJ

  • 制造商:

    ON Semiconductor

  • 功能描述:

    Bulk

供應商型號品牌批號封裝庫存備注價格
SANYO/三洋
22+
SOT-23
25000
只有原裝原裝,支持BOM配單
詢價
23+
SOP
16567
正品:QQ;2987726803
詢價
TI
2021
BGA
1000
全新、原裝
詢價
TOSHIBA/東芝
22+
SOT-89
20000
保證原裝正品,假一陪十
詢價
TOSHIBA/東芝
22+
SOT-89
100000
代理渠道/只做原裝/可含稅
詢價
XX
23+
SOT-234
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
XX
24+
NA/
12250
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
聯(lián)發(fā)科技MTK)
23+
集成電路IC-PROC,,
6000
原裝,現(xiàn)貨
詢價
NVIDIA
2023+
BGA
1
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價
FAIRCHILD/仙童
23+
SOT-23
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
詢價
更多MJ供應商 更新時間2025-4-8 15:00:00