MTW6N100中文資料摩托羅拉數據手冊PDF規(guī)格書
MTW6N100規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
產品屬性
- 型號：
MTW6N100
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
7350 |
現貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | |||
MOTOROLA/摩托羅拉 |
24+ |
TO-247 |
7850 |
只做原裝正品現貨或訂貨假一賠十! |
詢價 | ||
ON |
23+ |
TO-247 |
6893 |
詢價 | |||
FRE |
22+ |
TO |
25000 |
只做原裝進口現貨,專注配單 |
詢價 | ||
ON/安森美 |
25+ |
NA |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
FRE |
23+ |
TO |
15887 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
MOT |
25+23+ |
TO-3P |
41672 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
MOT |
06+ |
TO-247 |
2500 |
原裝庫存 |
詢價 | ||
MOTOROLA/摩托羅拉 |
24+ |
TO247 |
22055 |
鄭重承諾只做原裝進口現貨 |
詢價 | ||
24+ |
100000 |
自己現貨 |
詢價 |
