NCE30H29D

Marking：NCE30H29D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H29Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=290A RDS(ON)

NCE30H33LL

Marking：NCE30H33LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H33LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCE30ND35Q

Marking：NCE30ND35Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30ND35Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=35A RDS(ON)

NCE30NP07S

Marking：NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP07Susesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=6.5A RDS(ON)

NCE30NP1812G

Marking：30NP1812G；Package：DFN5X6-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP1812Gusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.Thisdeviceis suitableforuseininverterandotherapplications. GeneraFeatures N-channelP-channel ●VDS=30V,ID=18A●VDS=-30V,ID=-12A RDS(ON)

NCE30NP1812K

Marking：NCE30NP1812K；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP1812Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=18A RDS(ON)

NCE30NP1812Q

Marking：NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP1812Qusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.Thisdeviceis suitableforuseininverterandotherapplications. GeneraFeatures N-channelP-channel ●VDS=30V,ID=18A●VDS=-30V,ID=-12A RDS(ON)

NCE30NP4030G

Marking：30NP4030G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET

Description TheNCE30NP4030Gusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.Thisdeviceis suitableforuseininverterandotherapplications. GeneraFeatures N-channelP-channel ●VDS=30V,ID=40A●VDS=-30V,ID=-30A RDS(ON)

NCE30P06J

Marking：NCE30P06J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCE30P10S

Marking：NCE30P10S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P10Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-10A RDS(ON)