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NE4210S01-T1

HETEROJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1

SUPERLOWNOISEHJFET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1

XtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE4210S01-T1B

HETEROJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

SUPERLOWNOISEHJFET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1B

XtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NE4210S01-T1B-A

  • 功能描述：

    MOSFET Super Lo Noise HJFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-50
8200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
RENESAS
1742+
SMT86
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢價(jià)
RENESAS
20+
SMT86
49000
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
RENESAS/瑞薩
23+
SMT86
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
21+
SMT86
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
2022
SMT86
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
NEC
2013+
SMT36
3002
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
NEC
SMT36
893993
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
NEC
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
RENESAS/瑞薩
23+
NA/
1000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
更多NE4210S01-T1B-A供應(yīng)商 更新時(shí)間2025-2-7 15:30:00

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