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NE5550234

Silicon Power MOS FET

FEATURES ?HighOutputPower:Pout=33.0dBmTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?Highpoweraddedefficiency:ηadd=68TYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?HighLineargain:GL=23.5dBTYP.(VDS=7.5V,IDset=40mA,f=460MH

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550234-T1

Silicon Power MOS FET

FEATURES ?HighOutputPower:Pout=33.0dBmTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?Highpoweraddedefficiency:ηadd=68TYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?HighLineargain:GL=23.5dBTYP.(VDS=7.5V,IDset=40mA,f=460MH

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550279A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=33.0dBmTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?Highpoweraddedefficiency:ηadd=68TYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?HighLineargain:GL=22.5dBTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550279A-T1

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=33.0dBmTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?Highpoweraddedefficiency:ηadd=68TYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?HighLineargain:GL=22.5dBTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550279A-T1A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=33.0dBmTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?Highpoweraddedefficiency:ηadd=68TYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin=15dBm) ?HighLineargain:GL=22.5dBTYP.(VDS=7.5V,IDset=40mA,f=460MHz,Pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1-A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    NE55

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    SILICON POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
PHI
24+
DIP14
3629
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
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TEXASINSTRUMENTS
1030
全新原裝 貨期兩周
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23+
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5500
現(xiàn)貨,全新原裝
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23+
SMD
12000
全新原裝優(yōu)勢
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TI
1527
SOP-8
5000
原廠直銷
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NE
20+
SOP
6532
英卓爾原裝現(xiàn)貨!0755-82566558真實(shí)庫存!
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PHILIPS
95+
SOP16P
100
原裝現(xiàn)貨海量庫存歡迎咨詢
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ST
19+
DIP
87057
原廠代理渠道,每一顆芯片都可追溯原廠;
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UTC
SOP-8
63200
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TI
25+
SOP-8
7500
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更多NE55供應(yīng)商 更新時間2025-4-1 16:48:00