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NES2527B-30

30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION TheNES2527B-30ispowerGaAsFETwhichprovideshighoutputpowerandhighgaininthe2.5-2.7GHzband. Internalinputmatchingcircuitsaredesignedtooptimizeperformance.Thedevicehasa0.8μmgatelengthforincreasedlineargain.Toreducethermalresistance,thedeviceu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NES2527B-30

GaAs MES FET

30WS-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNES2527B-30ispowerGaAsFETwhich provideshighoutputpowerandhighgaininthe2.5-2.7 GHzband. Internalinputmatchingcircuitsaredesignedto optimizeperformance.Thedevicehasa0.8mmgate lengthforincreas

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NES30-24

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

LAMBDA

DENSEI-LAMBDA

NES30-24

DIN rail mountable

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Saf

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

NES60-24

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

LAMBDA

DENSEI-LAMBDA

NES60-24

DIN rail mountable

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Saf

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

NES71F

Compandor

FEATURES *Completecompressorandexpandorinone IChip *Temperaturecompensated *Greaterthan110dBdynamicrange *Operatesdownto6VDC *Systemlevelsadjustablewithexternal components *Distortionmaybetnmmedout *Dynamicnoisereductionsystems *Voltage-controlledamplifie

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NES71N

Compandor

FEATURES *Completecompressorandexpandorinone IChip *Temperaturecompensated *Greaterthan110dBdynamicrange *Operatesdownto6VDC *Systemlevelsadjustablewithexternal components *Distortionmaybetnmmedout *Dynamicnoisereductionsystems *Voltage-controlledamplifie

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NESG2021M05

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz ?Maximumstablepowergain:MSG=22.5dBT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2021M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz ?Maximumstablepowergain:MSG=22.5dBT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NES

  • 制造商:

    Altech Corporation

  • 類別:

    電路保護(hù) > 配件

  • 包裝:

    散裝

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

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更多NES供應(yīng)商 更新時(shí)間2025-4-21 11:52:00