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NESG2101M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2101M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators NECslowprofile,flatleadstyleM05Packageprovideshighfrequencyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2101M05

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-A

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2101M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators NECslowprofile,flatleadstyleM05Packageprovideshighfrequencyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2101M05-T1

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-T1-A

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPNSiGeRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(125mW)6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification PO(1dB)=21dBmTYP.@VCE=3.6

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16-T3

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPNSiGeRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(125mW)6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification PO(1dB)=21dBmTYP.@VCE=3.6

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

產(chǎn)品屬性

  • 產(chǎn)品編號:

    NES

  • 制造商:

    Altech Corporation

  • 類別:

    電路保護 > 配件

  • 包裝:

    散裝

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

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原裝長期供貨!
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絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
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12+
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3000
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NEC
24+
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原裝現(xiàn)貨,可開13%稅票
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MW
23+
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原裝正品,假一罰十
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24+
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18514
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原裝分銷
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更多NES供應(yīng)商 更新時間2025-4-21 16:20:00