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NP70N04MUG

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP70N04MUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=5.0mΩMAX.(VGS=10V,ID=35A) ?Channeltemperature175degreerated

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP70N04MUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP70N04MUG-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP70N04MUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=5.0mΩMAX.(VGS=10V,ID=35A) ?Channeltemperature175degreerated

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP70N10KUF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP74N04YUG

MOS FIELD EFFECT TRANSISTOR

Description TheNP74N04YUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=5.5mΩMAX.(VGS=10V,ID=37.5A) ?LowCiss:Ciss=3620pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP74N04YUG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP74N04YUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=5.5mΩMAX.(VGS=10V,ID=37.5A) ?LowCiss:Ciss=3620pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP74N04YUG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP74N04YUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=5.5mΩMAX.(VGS=10V,ID=37.5A) ?LowCiss:Ciss=3620pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP75N04VDK

40 V – 75 A – N-channel Power MOS FET Application: Automotive

Description TheNP75N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=5.7m?MAX.(VGS=10V,ID=38A) ?LowCiss:Ciss=1630pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP75N04VDK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP75N04VDK-E1-AY

40 V – 75 A – N-channel Power MOS FET Application: Automotive

Description TheNP75N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=5.7m?MAX.(VGS=10V,ID=38A) ?LowCiss:Ciss=1630pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP7

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
23+
TO-263
11813
全新原裝
 詢價
NEC
24+
TO-263
8866
詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
2023+
MP-25KTO-
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ROHM/羅姆
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
R
23+
T0-220
10000
公司只做原裝正品
 詢價
VB
21+
T0-220
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
2022+
TO-263
12888
原廠代理 終端免費提供樣品
 詢價
VB
T0-220
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
R
23+
T0-220
6000
原裝正品，支持實單
 詢價
更多NP7供應(yīng)商 更新時間2025-2-12 17:32:00

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